SUZUKI Toshikazu | Corporate SLSI Development Div., Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
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- Corporate SLSI Development Div., Semiconductor Company, Matsushita Electric Industrial Co., Ltd.の論文著者
Corporate SLSI Development Div., Semiconductor Company, Matsushita Electric Industrial Co., Ltd. | 論文
- 0.3-1.5V Embedded SRAM Core with Write-Replica Circuit Using Asymmetrical Memory Cell and Source-Level-Adjusted Direct-Sense-Amplifier(Memory, Low-Power LSI and Low-Power IP)
- A 1R/1W SRAM Cell Design to Keep Cell Current and Area Saving against Simultaneous Read/Write Disturbed Accesses(Memory,Low-Power, High-Speed LSIs and Related Technologies)
- A Differential Cell Terminal Biasing Scheme Enabling a Stable Write Operation against a Large Random Threshold Voltage (V_) Variation(Novel Device Architectures and System Integration Technologies)