Fujisawa Takashi | Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatuda, Midori-ku, Yokohama 226-8503, Japan
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- Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatuda, Midori-ku, Yokohama 226-8503, Japanの論文著者
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatuda, Midori-ku, Yokohama 226-8503, Japan | 論文
- Investigation of Sputtering Damage in SrRuO3 Films Prepared by Sputtering with Raman and X-ray Photoemission Spectroscopies
- Raman Spectroscopy Study of Oxygen Vacancies in PbTiO3 Thin Films Generated Heat-Treated in Hydrogen Atmosphere
- RF Magnetron Sputtering Growth of Epitaxial SrRuO3 Films with High Conductivity
- Evaluation of Residual Strain and Oxygen Vacancy in Multilayer Ceramic Capacitor Using Laser Raman Spectroscopy