Kitaura Yoshiaki | Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan

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概要

関連著者

Uchitomi Naotaka
Research And Development Center Toshiba Corporation
Yoshimura Misao
Research And Development Center Toshiba Corp.
Mihara Masakatsu
Research And Development Center Toshiba Corp.
Tanabe Yoshikazu
Research And Development Center Toshiba Corp.
Kakiuchi Yorito
Research And Development Center Toshiba Corporation
Nitta Tomohiro
Research And Development Center Toshiba Corporation
Kitaura Yoshiaki
Research And Development Center Toshiba Corp.
Nishihori Kazuya
Research And Development Center Toshiba Corporation
Yoshimura Misao
Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan
Kakiuchi Yorito
Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan
Nishihori Kazuya
Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan
Kitaura Yoshiaki
Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan
Nitta Tomohiro
Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan
Tanabe Yoshikazu
Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan
Uchitomi Naotaka
Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan
Mihara Masakatsu
Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan

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著作論文

A Self-Aligned Gate AlGaAs/GaAs Heterostructure Field-Effect Transistor with an Ion-Implanted Buried-Channel for use in High Efficiency Power Amplifiers

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