Nishihori Kazuya | Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan

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概要

• Nishihori Kazuyaの詳細を見る
• 同名の論文著者
• Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japanの論文著者

関連著者

• Uchitomi Naotaka

  Research And Development Center Toshiba Corporation

• Yoshimura Misao

  Research And Development Center Toshiba Corp.

• Mihara Masakatsu

  Research And Development Center Toshiba Corp.

• Tanabe Yoshikazu

  Research And Development Center Toshiba Corp.

• Kakiuchi Yorito

  Research And Development Center Toshiba Corporation

• Nitta Tomohiro

  Research And Development Center Toshiba Corporation

• Kitaura Yoshiaki

  Research And Development Center Toshiba Corp.

• Nishihori Kazuya

  Research And Development Center Toshiba Corporation

• Yoshimura Misao

  Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan

• Kakiuchi Yorito

  Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan

• Nishihori Kazuya

  Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan

• Kitaura Yoshiaki

  Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan

• Nitta Tomohiro

  Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan

• Tanabe Yoshikazu

  Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan

• Uchitomi Naotaka

  Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan

• Mihara Masakatsu

  Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan

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著作論文

• A Self-Aligned Gate AlGaAs/GaAs Heterostructure Field-Effect Transistor with an Ion-Implanted Buried-Channel for use in High Efficiency Power Amplifiers

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