HOSONO Kunihiro | LSI Laboratory, Mitsubishi Electric Corporation
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概要
LSI Laboratory, Mitsubishi Electric Corporation | 論文
- SiO_2 Etching Characteristics with Low-Energy Ions Generated by Electron Cyclotron Resonance Plasma Using CF_4 and NF_3 Gases
- High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient : Etching
- High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient
- Mechanism for AlSiCu Alloy Corrosion
- Low-Temperature Reactive Ion Etching for Multi-Layer Resist (Special Issue on Sub-Half Micron Si Device and Process Technologies)