SUZUKI Tohru | Department of Electronics, Hiroshima Institute of Technology
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概要
Department of Electronics, Hiroshima Institute of Technology | 論文
- Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
- Damage Effects in Silicon Surface Barrier Detectors with 0.5-2 MeV Protons
- Damage Effects in Silicon Surface Barrier Detectors by 0.5-1.5 MeV Electrons