SIM Hyunjun | Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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- Department of Materials Science and Engineering, Kwangju Institute of Science and Technologyの論文著者
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology | 論文
- Effect of Hydrogen Partial Pressure on the Reliability Characteristics of Ultrathin Gate Oxide
- Ultrashallow p^+/n Junction Formation by 0.5-1 keV Ion Implantation
- Investigation into the Role of Low-Temperature GaN in n-GaN/InGaN/p-GaN Double-Heterostructure Light-Emitting Diodes
- The Effect of Ar/O_2 Ratio on Electrochromic Response Time of Ni Oxides Grown Using an RF Sputtering System : Atoms, Molecules, and Chemical Physics
- Electrical and Structural Properties of Nanolaminate (Al_2O_3/ZrO_2/Al_2O_3) for Metal Oxide Semiconductor Gate Dielectric Applications