Hayashi Kiyoshi | Advanced Device Development Department, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
スポンサーリンク
概要
- Hayashi Kiyoshiの詳細を見る
- 同名の論文著者
- Advanced Device Development Department, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japanの論文著者
Advanced Device Development Department, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan | 論文
- W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory
- Suppression of Self-Heating in Hybrid Trench Isolated SOI MOSFETs with Poly-Si plug and W plug
- Impact of Body Bias Controlling in Partially Depleted SOI Devices with Hybrid Trench Isolation Technology
- A 90nm-node SOI Technology for RF Applications