NAKAJIMA Shigeyuki | Research Center of Ion Beam Technology, Hosei University
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概要
Research Center of Ion Beam Technology, Hosei University | 論文
- Characterization of WN_x/GaAs Schottky Contacts Formed by Reactive RF Sputtering
- Study of Surface Processes in the Digital Etching of GaAs
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System : Etching and Deposition Technology
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System
- A framework for presentation and use of everyday interaction histories (日韓合同ワークショップ 1st Korea-Japan Joint Workshop on Ubiquitous Computing and Networking Systems (ubiCNS 2005))