Kang Hee-Bok | New Device Team, Memory R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri Bubal-eub Ichon-si, Kyoungki-do 467-701, Korea
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- New Device Team, Memory R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri Bubal-eub Ichon-si, Kyoungki-do 467-701, Koreaの論文著者
New Device Team, Memory R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri Bubal-eub Ichon-si, Kyoungki-do 467-701, Korea | 論文
- Imprint Characteristics of Ferroelectric Thin Films at Elevated Storage and Operation Temperatures
- Issues and Reliability of High-Density FeRAMs
- Imprint Characteristics of Ferroelectric Thin Films at Elevated Storage and Operation Temperatures
- Issues and Reliability of High-Density FeRAMs