Watanabe Masahiro | Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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- 同名の論文著者
- Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japanの論文著者
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan | 論文
- Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors
- Ultrathin Poly(4-vinylphenol) Interfacial Layer Evaporation for Low-Voltage Operation of Organic Field-Effect Transistors with HfO
- The Japanese National Health Screening and Intervention Program Aimed at Preventing Worsening of the Metabolic Syndrome
- Suppression of Leakage Current of CdF2/CaF2 Resonant Tunneling Diode Structures Grown on Si(100) Substrates by Nanoarea Local Epitaxy
- In situ Formation of HfN/HfSiON Gate Stacks with 0.5 nm Equivalent Oxide Thickness Utilizing Electron Cyclotron Resonance Plasma Sputtering on Three-Dimensional Si Structures