Song Yunheub | Department of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea

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概要

関連著者

SONG Youngsun
Memory Business, Samsung Electronics Co., Ltd.
KANG Myounggon
Memory Business, Samsung Electronics Co., Ltd.
Park Ki-tae
Memory Business Samsung Electronics Co. Ltd.
Song Yunheub
Department Of Electronics Engineering Chungnam National University
Kim Changhyun
Memory Division Samsung Electronics Co. Ltd.
Choi Byung
Memory R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #14, Banwol-dong, Hwasung, Kyunggi-do 445-701, Korea
Song Youngsun
Memory R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #14, Banwol-dong, Hwasung, Kyunggi-do 445-701, Korea
Hwang Soonwook
Memory R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #14, Banwol-dong, Hwasung, Kyunggi-do 445-701, Korea
Lee Yeong-Taek
Memory R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #14, Banwol-dong, Hwasung, Kyunggi-do 445-701, Korea
Song Yunheub
Department of Electronics and Communications Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
Song Yunheub
Department of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
Lee Yeong-Taek
Memory R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #14, Banwol-dong, Hwasung, Kyunggi-do 445-701, Korea
Park Ki-Tae
Memory R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #14, Banwol-dong, Hwasung, Kyunggi-do 445-701, Korea
Kang Myounggon
Memory R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #14, Banwol-dong, Hwasung, Kyunggi-do 445-701, Korea
Hwang Soonwook
Memory R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #14, Banwol-dong, Hwasung, Kyunggi-do 445-701, Korea

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著作論文

Improving Read Disturb Characteristics by Self-Boosting Read Scheme for Multilevel NAND Flash Memories

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