Park Ki-Tae | Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung 445-701, Korea

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概要

関連著者

SUH Kang-Deog
Sungkyunkwan University
Kang Myounggon
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat
Shin Hyungcheol
Inter-university Semiconductor Research Center (isrc)
Shin Hyungcheol
Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
Lim Youngho
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung 445-701, Korea
Suh Kang-Deog
Sungkyunkwan University, Suwon 440-746, Korea
Park Ki-Tae
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung 445-701, Korea
Song Youngsun
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung 445-701, Korea
Kang Myounggon
Inter-University Semiconductor Research Center (ISRC)
Kang Myounggon
Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea

著作論文

Improving Read Disturb Characteristics by Using Double Common Source Line and Dummy Switch Architecture in Multi Level Cell NAND Flash Memory with Low Power Consumption

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