OHJI Y. | Renesas Technology Corp., Wafer Process Engineering Development Dept.
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概要
Renesas Technology Corp., Wafer Process Engineering Development Dept. | 論文
- Suppression of Boron Penetration from S/D Extension to improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65nm node CMOS and beyond
- A Novel STI Process from the View Point of Total Strain Process Design for 45nm Node Devices and Beyond