SIN Johnny | Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology
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- 同名の論文著者
- Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technologyの論文著者
Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology | 論文
- Invited Channel Engineering of 3-Nitride HEMTs for Enhanced Device Performance (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Invited Channel Engineering of 3-Nitride HEMTs for Enhanced Device Performance (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Doping Concentration and Structural Dependences of the Thermal Stability of the 2DEG in GaN-Based High-Electron-Mobility Transistor Structures
- Device Isolation by Plasma Treatment for Planar Integration of E/D-mode AlGaN/GaN HEMTs