MOTOHISA Junichi | Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University | 論文
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
- Interface characterization of Al_2O_3/AlGaN structures prepared by atomic layer deposition
- Characterization of GaN surfaces after high-temperature annealing and carbon diffusion(Session9B: GaN and SiC Device Process Technology)
- Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress(Plenary,Heterostructure Microelectronics with TWHM2005)
- 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network(Session4B: Emerging Devices II)