Shiga Katsuya | Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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- Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japanの論文著者
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan | 論文
- Narrow Line Effect of Nickel Silicide on p+ Active Lines and Its Suppression by Fluorine Ion Implantation
- Evaluation of the Strain around an Isolated Shallow Trench and the Impact of Stress on LSI Device Performance
- Analytical Approach for Enhancement of n-Channel Metal--Oxide--Semiconductor Field-Effect Transistor Performance with Carbon-Doped Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing
- Characterizations of NiSi2-Whisker Defects in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with $\langle 110\rangle$ Channel on Si(100)
- Anomalous Nickel Silicide Encroachment in n-Channel Metal–Oxide–Semiconductor Field-Effect Transitors on Si(110) Substrates and Its Suppression by Si+ Ion-Implantation Technique