UEHARA Takashi | Graduate School of Frontier Science, The Univ. of Tokyo
スポンサーリンク
概要
Graduate School of Frontier Science, The Univ. of Tokyo | 論文
- Examination of the Universality of Hole Mobility in Strained-Si p-MOSFETs
- Fabrication of III-V-O-I (III-V on Insulator) structures on Si using micro-channel epitaxy with a two-step growth technique
- Fabrication of SiO_2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge
- Ultra-thin Ge-on-Insulator (GOI) Metal S/D p-channel MOSFETs fabricated by low temperature MBE growth
- Energy relaxation of two-dimensional electrons in Si-MOSFETs : determination of deformational potential constant of conduction band of Si