Mori Nobuya | Department of Electronic Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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- 同名の論文著者
- Department of Electronic Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japanの論文著者
Department of Electronic Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan | 論文
- Reduction of Electron Decay Time Using Disordered Tunnel Barrier
- Effects of Strained Layers on Zener Tunneling in Silicon Nanostructures
- Analytical Compact Model of Ballistic Cylindrical Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor
- Mode-Coupling Effects in Non-Equilibrium Green’s Function Device Simulation