YANAI Hisayoshi | Department of Electronic Engineering, Faculty of Engineering, University of Tokyo
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Department of Electronic Engineering, Faculty of Engineering, University of Tokyo | 論文
- Dopant Segregation in Earth- and Space-Grown InP Crystals
- InP Layer Grown on (001) Silicon Substrate by Epitaxial Lateral Overgrowth
- Arsenic Pressure Dependence of Surface Diffusion of Ga on Nonplanar GaAs Substrates
- The Origin of Dark Region in LPE GaP Associating with Macrostep Riser
- Characterization of SOS Films Grown with Amorphous Si Buffer Layers by MOS FET's