LAI Ming | Department of Electronic Engineering, Chang Gung University
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概要
Department of Electronic Engineering, Chang Gung University | 論文
- High Performance Power MOSFETs by Wing-Cell Structure Design(Si Devices and Processes,Fundamental and Application of Advanced Semiconductor Devices)
- Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
- High Power Density and Large Voltage Swing of Enhancement-Mode Al_Ga_As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5 V L-Band Applications
- Observation of Transient Enhanced Diffusion in B^+-Implanted Si by Buried Boron Isotopes
- Time Dependence of Phosphorus Diffusion and Dose Loss during Postimplantation Annealing at Low Temperatures