AHN Y. | Department of Physics, Korea Advanced Institute of Science and Technology
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概要
Department of Physics, Korea Advanced Institute of Science and Technology | 論文
- Regularity Analysis of Inter-Out-of-Equilibrium State Intervals in Financial Markets(Cross-disciplinary physics and related areas of science and technology)
- Determination of the Interface Trap Density in Metal Oxide Semiconductor Field-Effect Transistor through Subthreshold Slope Measurement
- Determination of Flat-Band Voltages for Fully Depleted Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET's)
- ANNEALING BEHAVIOR OF BIAS INDUCED DEGRADATION IN A-SI : H TFTs (Korea-Japan Joint Symposium on Information Display)
- Field-Effect Conductance Activation Energy in Polycrystalline Silicon Thin-Film Transistors after Bias Stress