EMA Takahiro | ULSI Device Development Laboratories, NEC Corp.
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概要
ULSI Device Development Laboratories, NEC Corp. | 論文
- Study of Penetrated Boron Concentration through Ultra-Thin Oxynitrided Gate Dielectrics
- 0.15 μm Electron Beam Direct Writing for Gbit Dynamic Random Access Memory Fabrication
- Resist Heating in Cell Projection Electron Beam Direct Writing
- 0.25 μm Electron Beam Direct Writing Techniques for 256 Mbit Dynamic Random Access Memory Fabrication
- Improved Registration Accuracy in E-Beam Direct Writing Lithography