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ULSI Device Development Laboratories, NEC Corp. | 論文

• Study of Penetrated Boron Concentration through Ultra-Thin Oxynitrided Gate Dielectrics
• 0.25 μm Electron Beam Direct Writing Techniques for 256 Mbit Dynamic Random Access Memory Fabrication
• 0.15 μm Electron Beam Direct Writing for Gbit Dynamic Random Access Memory Fabrication
• Resist Heating in Cell Projection Electron Beam Direct Writing
• Improved Registration Accuracy in E-Beam Direct Writing Lithography
• 0.15 µm Electron Beam Direct Writing for Gbit Dynamic Random Access Memory Fabrication

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