Study of Penetrated Boron Concentration through Ultra-Thin Oxynitrided Gate Dielectrics
スポンサーリンク
概要
- 論文の詳細を見る
- 1995-08-21
著者
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Manchanda L.
At&t Bell Laboratories
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KAWATA M.
ULSI Device Development Laboratories, NEC Corp.
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KITAKATA M.
ULSI Device Development Laboratories, NEC Corp.
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HASEGAWA E.
ULSI Device Development Laboratories, NEC Corp.
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ISHITANI A.
ULSI Device Development Laboratories, NEC Corp.
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KRISCH K.
AT&T Bell Laboratories
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GREEN M.
AT&T Bell Laboratories
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BRASEN D.
AT&T Bell Laboratories
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MANCHANDA L.
AT&T Bell Laboratories
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FELDMAN L.
AT&T Bell Laboratories
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Brasen D.
At&t Bell Laboratories
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Krisch K.
At&t Bell Laboratories
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Kitakata M.
Ulsi Device Development Laboratories Nec Corp.
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Feldman L.
At&t Bell Laboratories
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Green M.
At&t Bell Laboratories
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Ishitani A.
Ulsi Device Development Laboratories Nec Corp.