KOYAMA Masato | Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
スポンサーリンク
概要
- KOYAMA Masatoの詳細を見る
- 同名の論文著者
- Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporationの論文著者
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation | 論文
- Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport(Session 4A : Channel Engineering)
- Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport(Session 4A : Channel Engineering)
- Experimental Study of Uniaxial Stress Effects on Coulomb-limited Electron and Hole Mobility in Si-MOSFETs
- Examination of Performance Improvement in Dopant Segregated Schottky MOSFETs ; Short Channel Effects, Carrier Velocity and Parasitic Resistance
- Novel Fabrication Technique for Relaxed SiGe-on-Insulator Substrates without Thick SiGe Buffer Structures