YAMAGUCHI Masafumi | Semiconductor Research Center, Toyota Technological Institute
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概要
Semiconductor Research Center, Toyota Technological Institute | 論文
- Rectifying I-V Characteristics of n-Type Fluorine Implanted a-C/p-Type Si Heterojunction Diodes
- Rectifying I-V Characteristics of n-Type Fluorine Implanted a-C/p-Type Si Heterojunction Diodes
- Ion Beam Induced Effects in RF Plasma Chemical Vapor Deposition Deposited Hydrogenated Amorphous Carbon Thin Films