Kim Wandong | Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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- Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Koreaの論文著者
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea | 論文
- A New Cone-Type 1T DRAM Cell(Session 2A : Memory 1)
- A New Cone-Type 1T DRAM Cell(Session 2A : Memory 1)
- Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect(Session 2A : Memory 1)
- Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect(Session 2A : Memory 1)
- Multi-level reading method by using PCI (Paired Cell Interference) in vertical NAND flash memory