Yang Wen-Luh | Department of Electronic Engineering, Feng Chia University, Taichung 407, Taiwan, R.O.C.

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• 同名の論文著者
• Department of Electronic Engineering, Feng Chia University, Taichung 407, Taiwan, R.O.C.の論文著者

Department of Electronic Engineering, Feng Chia University, Taichung 407, Taiwan, R.O.C. | 論文

• Suppression of Boron Penetration in P+-Poly-SiGe Gate P-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using NH3-Nitrided and N2O-Grown Gate Oxides
• Study of Drain Alloy for Antimony Substrate Vertical High Voltage Power Metal Oxide Semiconductor Field Effect Transistors

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