スポンサーリンク
Department of Electronic Engineering, Feng Chia University, Taichung 407, Taiwan, R.O.C. | 論文
- Study of Drain Alloy for Antimony Substrate Vertical High Voltage Power Metal Oxide Semiconductor Field Effect Transistors
- Suppression of Boron Penetration in P+-Poly-SiGe Gate P-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using NH3-Nitrided and N2O-Grown Gate Oxides