Matsunami Hiroyuki | Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan
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- Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japanの論文著者
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan | 論文
- Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal–Oxide–Semiconductor Field-Effect Transistors
- Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory
- Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition
- Microscopic Investigation of the Electrical and Structural Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells
- High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H–SiC Epilayers