Huang Ying-Sheng | Department of Electronic Engineering, National Taiwan Institute of Technology
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概要
Department of Electronic Engineering, National Taiwan Institute of Technology | 論文
- An Analytical Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering the Effects of Self-Heating, Source/Drain Resistance, Impact-Ionization, and Parasitic Bipolar Junction Transistor
- A Simple, Analytical and Complete Deep-Submicrometer Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering Velocity Overshoot
- Effects of Ni Silicidation on the Shallow p^+n Junctions Formed by BF^+_2 Implantation into Thin Polycrystalline-Si Films on Si Substrates
- Quadrature Hartley VCO and Injection-Locked Frequency Divider
- A New Post-stress Drain Current Model for Surface-channel p-Type Metal-Oxide-Semiconductor-Field-Effect-Transistors