Matsuura Hideharu | Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan

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概要

関連著者

Ohshima Takeshi
Japan Atomic Energy Agency
Matsuura Hideharu
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
Matsuura Hideharu
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan
Izawa Keisuke
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan
Minohara Nobumasa
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan

著作論文

Mechanisms of Reduction in Hole Concentration in Al-Implanted p-Type 6H-SiC by 1 MeV Electron Irradiation

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