Ken Uchida | Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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- Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japanの論文著者
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan | 論文
- Optimization of Source/Drain Doping Level of Carbon Nanotube Field-Effect Transistors to Suppress OFF-State Leakage Current while Keeping Ideal ON-State Current
- Layer-by-Layer Assembled Transparent Conductive Graphene Films for Silicon Thin-Film Solar Cells
- Development of Boron-Doped ZnO Films with Novel Thin Zn-Rich Film and Their Application to Solar Cells
- Quantitative Analysis of Surface Morphology of Boron-Doped Zinc Oxide for Microcrystalline Silicon Solar Cells
- Contact Resistance as an Origin of the Channel-Length-Dependent Threshold Voltage in Organic Field-Effect Transistors