Handa Katsumi | Ritsumeikan University, 1-1-1 Noji-higashi, Kusatsu, Shiga 525-8577, Japan
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- Ritsumeikan University, 1-1-1 Noji-higashi, Kusatsu, Shiga 525-8577, Japanの論文著者
Ritsumeikan University, 1-1-1 Noji-higashi, Kusatsu, Shiga 525-8577, Japan | 論文
- GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel Mobility
- Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
- Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)