Suzuki Eiichi | Nanoelectronics Research Institute, AIST, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Nanoelectronics Research Institute, AIST, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan | 論文
- Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes
- Programmable Conductivity of Silicon Nanowires with Side Gates by Surface Charging
- Emission Statistics for HfC Emitter Arrays after Residual Gas Exposure
- Modeling of Focused Carbon Nanotube Array Emitters for Field-Emission Displays