PENG Hsing-Kan | Department of Electronic Engineering, Chang Gung University

スポンサーリンク

概要

• PENG Hsing-Kanの詳細を見る
• 同名の論文著者
• Department of Electronic Engineering, Chang Gung Universityの論文著者

Department of Electronic Engineering, Chang Gung University | 論文

• High Performance Power MOSFETs by Wing-Cell Structure Design(Si Devices and Processes,Fundamental and Application of Advanced Semiconductor Devices)
• Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
• High Power Density and Large Voltage Swing of Enhancement-Mode Al_Ga_As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5 V L-Band Applications
• Observation of Transient Enhanced Diffusion in B^+-Implanted Si by Buried Boron Isotopes
• Time Dependence of Phosphorus Diffusion and Dose Loss during Postimplantation Annealing at Low Temperatures

もっと見る

スポンサーリンク