Yun Sun | Teraelectronic Devices Team, Electronics and Telecommunications Research Institute, 161 Gajung-dong, Yusong-gu, Daejon 305-350, Korea
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概要
- Yun Sun Jinの詳細を見る
- 同名の論文著者
- Teraelectronic Devices Team, Electronics and Telecommunications Research Institute, 161 Gajung-dong, Yusong-gu, Daejon 305-350, Koreaの論文著者
関連著者
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Lim Jung
Teraelectronic Devices Team, Electronics and Telecommunications Research Institute, 161 Gajung-dong, Yusong-gu, Daejon 305-350, Korea
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Yun Sun
Teraelectronic Devices Team, Electronics and Telecommunications Research Institute, 161 Gajung-dong, Yusong-gu, Daejon 305-350, Korea
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LIM Jung
Teraelectronics device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunicati
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KIM Hyun-Tak
Teraelectronics device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunicati
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Lee Yong
Teraelectronics Device Team It-convergence & Components Laboratory Electronics And Telecommunica
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Yun Sun
Teraelectronics Device Team It-convergence & Components Laboratory Electronics And Telecommunica
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Kim Hyun
Teraelectronics Device Team It-convergence & Components Laboratory Electronics And Telecommunica
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KIM Bong
Teraelectronics device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunicati
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Kim Bong
Teraelectronics Device Team It-convergence & Components Laboratory Electronics And Telecommunica
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Lim Jung
Teraelectronics Device Team It-convergence & Components Laboratory Electronics And Telecommunica
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Noh Jong-Su
Teraelectronic Devices Team, Electronics and Telecommunications Research Institute, 161 Gajung-dong, Yusong-gu, Daejon 305-350, Korea
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Chae Byung-Gyu
Teraelectronic Devices Team, Electronics and Telecommunications Research Institute, 161 Gajung-dong, Yusong-gu, Daejon 305-350, Korea
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Kim Hyun-Tak
Teraelectronic Devices Team, Electronics and Telecommunications Research Institute, 161 Gajung-dong, Yusong-gu, Daejon 305-350, Korea
著作論文
- Abrupt metal insulator transition of TiO_2 and Al_xTi_O_y thin films
- Vanadium Dioxide Films Deposited on Amorphous SiO2- and Al2O3-Coated Si Substrates by Reactive RF-Magnetron Sputter Deposition