Meishoku Masahara | National Institute of Advanced Industrial Science and Technology, 2-13 Tsukuba Central, Umezono, Tsukuba, Ibaraki 305-8568, Japan
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- National Institute of Advanced Industrial Science and Technology, 2-13 Tsukuba Central, Umezono, Tsukuba, Ibaraki 305-8568, Japanの論文著者
National Institute of Advanced Industrial Science and Technology, 2-13 Tsukuba Central, Umezono, Tsukuba, Ibaraki 305-8568, Japan | 論文
- Low Temperature, Beam-Orientation-Dependent, Lattice-Plane-Independent, and Damage-Free Oxidation for Three-Dimensional Structure by Neutral Beam Oxidation
- High-Performance Three-Terminal Fin Field-Effect Transistors Fabricated by a Combination of Damage-Free Neutral-Beam Etching and Neutral-Beam Oxidation