スポンサーリンク
National Institute of Advanced Industrial Science and Technology, 2-13 Tsukuba Central, Umezono, Tsukuba, Ibaraki 305-8568, Japan | 論文
- High-Performance Three-Terminal Fin Field-Effect Transistors Fabricated by a Combination of Damage-Free Neutral-Beam Etching and Neutral-Beam Oxidation
- Low Temperature, Beam-Orientation-Dependent, Lattice-Plane-Independent, and Damage-Free Oxidation for Three-Dimensional Structure by Neutral Beam Oxidation