B. Nishimura | Kansai Electronics Research Laboratories Nec Corporation
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概要
Kansai Electronics Research Laboratories Nec Corporation | 論文
- Wide-Band CDMA Distortion Characteristics of an AlGaAs/InGaAs/AlGaAs Heterojunction FET under Various Quiescent Drain Current Operations (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Analysis of Electric Field Distribution in Novel GaAs MESFET with a Field-Modulating Plate
- 1.0V Operation Power Heterojunction FET for Digital Cellular Phones
- Single 1.5V Operation Power Amplifier MMIC with SrTiO_3 Capacitors for 2.4GHz Wireless Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
- Power Heterojunction FETs for Low-Voltage Digital Cellular Applications