Yokoyama H. | Nanoelectronics Research Institiute Aist
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概要
Nanoelectronics Research Institiute Aist | 論文
- TiN Gate Work Function Control Using Nitrogen Gas Flow Ratio and RTA-Temperature
- Dual Metal Gate MOSFETs with Symmetrical Threshold Voltages Using Work Function Tuned Ta/Mo Bi-layer Metal Gates
- Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes
- Carrier Mobility in Multi-FinFETs with a (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching
- Investigation of Accumulation-mode Vertical Double-gate MOSFET