Hamamoto M. | Research Information Center Institute Of Plasma Physics Nagoya University:dep. Of Engineering Oita Univ.
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論文 | ランダム
- Advantage of Highly Concentrated (${\geq}90$%) Ozone for Chemical Vapor Deposition SiO2 Grown under 200 °C Using Hexamethyldisilazane and Ultraviolet Light Excited Ozone
- Low-Temperature Deposition of Silicon Oxide Film from the Reaction of Silicone Oil Vapor and Ozone Gas
- Experimental Study on a Stirling Cycle Machine of 100W Design Capacity
- Effect of Low Level O2 Addition to N2 on Surface Cleaning by Nonequilibrium Atmospheric-Pressure Pulsed Remote Plasma
- Rapid Oxidation of Silicon Using UV-Light Irradiation in Low-Pressure, Highly Concentrated Ozone Gas below 300 °C