Choi J. | Semiconductor R&d Center Samsung Electronics Co Ltd.
スポンサーリンク
概要
関連著者
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HWANG B.
Semiconductor R&D Center, Samsung Electronics, Co Ltd.
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CHOI J.
Semiconductor R&D Center, Samsung Electronics, Co Ltd.
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Choi J.
Semiconductor R&d Center Samsung Electronics Co Ltd.
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LEE S.
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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KIM S.
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Lee M.
Semiconductor R&d Center Samsung Electronics Co Ltd.
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Lee S.
Semiconductor R&d Center Samsung Electronics Co Ltd.
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Lee H.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Park K.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Fujihara K.
Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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CHUNG U.
Semiconductor R&D Center, Samsung Electronics, Co Ltd.
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KANG H.
Semiconductor R&D Center, Samsung Electronics Co., LTD
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PARK T.
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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SHIN Y.
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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LI Z.
Applied Materials, Inc.
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LEE Y.
Applied Materials, Inc.
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MOGHADAM F.
Applied Materials, Inc.
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Lee S.
Semiconductor Advanced Research Div. Hyundai Electronics Industries Co.
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Moghadam F.
Applied Materials Inc.
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Kim S.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang H.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang H.
Semiconductor Research Center Samsung Electronics Co. Ltd.
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Fujihara K.
Semiconductor R&d Center Samsung Electronics Co Ltd.
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Choi J.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
著作論文
- Elimination of Al Line and Via Resistance Degradation under HTS Test in the Application of F-Doped Oxide as Intermetal Dielectrics
- A Manufacturable HDP Oxide Filled STI Process with SiN Liner for the Deep Sub-Micron Inter-Well Isolation