Jung Donggeun | Department Of Physics Brain Korea 21 Physics Research Division And Institute Of Basic Science Sun Gl
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- Department Of Physics Brain Korea 21 Physics Research Division And Institute Of Basic Science Sun Glの論文著者
Department Of Physics Brain Korea 21 Physics Research Division And Institute Of Basic Science Sun Gl | 論文
- Formation of Reliable HfO_2/HfSi_xO_y Gate-Dielectric for Metal-Oxide-Semiconductor Devices
- Properties of HfO_2/Hf-Silicate/Si Structures with Hf-Silicate Formed by Hf Metal Deposition and Subsequent Reaction : Electrical Properties of Condensed Matter
- Structural and electrical properties of HfO_2/Hf-silicate/Si structures by rf magnetron sputtering
- Structural and electrical properties of HfO_2/Hf-silicate/Si structures by rf magnetron sputtering
- Structural and Electrical Properties of HfO2/ Hf-silicate /Si Structures by rf-Magnetron Sputtering (2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2001))