Kuroi Takashi | Mixed Signal Device Technology Department Devices & Analysis Technology Division Renesas Electro
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- Mixed Signal Device Technology Department Devices & Analysis Technology Division Renesas Electroの論文著者
Mixed Signal Device Technology Department Devices & Analysis Technology Division Renesas Electro | 論文
- Analysis of Snapback Phenomena in VDMOS Transistor having the High Second Breakdown Current : A High ESD Mechanism Analysis
- ESD Robustness Improvement for Integrated DMOS Transistors-The Different Gate-Voltage Dependence of I_ Between VDMOS and LDMOS Transistors
- Novel Design of Vertical Double-Diffused Metal–Oxide–Semiconductor Transistor for High Electrostatic Discharge Robustness