Feng Songlin | State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai
スポンサーリンク
概要
- FENG Songlinの詳細を見る
- 同名の論文著者
- State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai の論文著者
State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai | 論文
- Si_2Sb_2Te_6 Phase Change Material for Low-Power Phase Change Memory Application
- Germanium Nitride Interfacial Layer for Chalcogenide Random Access Memory Applications
- High Speed Chalcogenide Random Access Memory Based on Si_2Sb_2Te_5
- Investigation of Compositional Gradient Phase Change Si_xSb_2Te_3 Thin Films
- Multilevel Data Storage Characteristics of Phase Change Memory Cell with Doublelayer Chalcogenide Films (Ge_2Sb_2Te_5 and Sb_2Te_3)