Fujikura Hajime | Department Of Electrical Engineering Faculty Of Engineering And Research Center For Interface Quantu
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Department Of Electrical Engineering Faculty Of Engineering And Research Center For Interface Quantu | 論文
- Characterization of Deep Levels in Si-Doped In_xAl_As Layers Growrn by Molecular Beam Epitaxy
- Reappraisal of Si-Interlayer-Induced Change of Band Discontinuity as GaAs-AlAs Heterointerface Taking Account of Delta-Doping
- Involvement of Mechanical Stretch in the Gelatinolytic Activity of the Fibrous Sclera of Chicks, In Vitro
- Fabrication of InGaAs Wires by Preferential Molecular Beam Epitaxy Growth on Corrugated InP Substrate
- Hydrogen sensing characteristics and mechanism of Pd/AlGaN/GaN Schottky diodes subjected to oxygen gettering