Onomura M. | Materials And Devices Research Laboratories Toshiba Corporation
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概要
Materials And Devices Research Laboratories Toshiba Corporation | 論文
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
- The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
- Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment
- Trapping States in CaS and SrS Single Crystals, Films and Powders as Revealed Using the Technique of Transient Thermoluminescence
- Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment