Rao Feng | State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai
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State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai | 論文
- Si_2Sb_2Te_6 Phase Change Material for Low-Power Phase Change Memory Application
- Germanium Nitride Interfacial Layer for Chalcogenide Random Access Memory Applications
- High Speed Chalcogenide Random Access Memory Based on Si_2Sb_2Te_5
- Investigation of Compositional Gradient Phase Change Si_xSb_2Te_3 Thin Films
- Multilevel Data Storage Characteristics of Phase Change Memory Cell with Doublelayer Chalcogenide Films (Ge_2Sb_2Te_5 and Sb_2Te_3)